In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓材料上具有室温铁磁
质，被预期能运
在磁记忆体元件和积体
路材料上。
阻容
;;容;阻器;介质;;
;,感应;，热量;]阻负载In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓材料上具有室温铁磁质，被预期能运在磁记忆体元件和积体路材料上。
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