An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件
锁效应入手,提出了
锁一种新方法—伪锁路径法。
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件锁效应入手,提出了锁一种新方法—伪锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC造技术快速发展，可量产CMOS技术，其特征线宽也由0.13um 进入了90nm甚
65nm
下。
声明：
上例句、词性分类均由互联网资源自动生成，部分未经过人工审核，其表达内容亦不代表本软件
观点；若发现问题，欢迎向我们指正。
