Nonpolarized capacitor C1 and potentiometer R2, a linear taper, determine the time constant of integrator IC1B.

无极性容C1和线性锥形位R2决 定积分IC1B的时间常数。

We quantizied the mesoscopic LC circuit, based on the infirmness coupling characteristic of a mesoscopic capacitor .

基于观容存在弱耦合特性,对观LC路的量子效应进行了研究。

Carbon Nanotubes (CNTs) were activated by CO2 and air under different durations, then were used in polarizable electrodes of electric double-layer capacitors (EDLCs).

摘要对碳纳米管粉体在高温下进行空气和二氧化碳活化处理，用于制作双层容极板。

The interelectrode dielectric adopts the polypropylene film with surface coarsening which is easy to impregnate so as to enhance the reliability of high-capacity capacitor.

极间为易于浸渍的表面粗化聚丙薄膜，特别提高了大容量容的可靠性。

For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.

另外以感容阻计量仪(HP4284A)进行C-V曲线量测；以微安培计量仪(HP4140B)进行J-V曲线量测。

Nonpolarized capacitor C1 and potentiometer R2, a linear taper, determine the time constant of integrator IC1B.

无极性C1和线性锥形位R2决 定积分IC1B的时间常数。

We quantizied the mesoscopic LC circuit, based on the infirmness coupling characteristic of a mesoscopic capacitor .

基于介观存在弱耦合特性,对介观LC路的量子效应进行了研究。

Carbon Nanotubes (CNTs) were activated by CO2 and air under different durations, then were used in polarizable electrodes of electric double-layer capacitors (EDLCs).

摘要对碳纳米管粉体在高温下进行空气和二氧化碳活化处理，并用于制作双层极板。

The interelectrode dielectric adopts the polypropylene film with surface coarsening which is easy to impregnate so as to enhance the reliability of high-capacity capacitor.

极间介质为易于浸渍的表面粗化聚丙薄膜，特别提高了大量的可靠性。

For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.

另外以感阻计量仪(HP4284A)进行C-V曲线量测；以微安培计量仪(HP4140B)进行J-V曲线量测。

Nonpolarized capacitor C1 and potentiometer R2, a linear taper, determine the time constant of integrator IC1B.

无极性容C1和线性锥形位器R2决 定积分器IC1B的时间常数。

We quantizied the mesoscopic LC circuit, based on the infirmness coupling characteristic of a mesoscopic capacitor .

基于介观容存在弱特性,对介观LC路的量子效应进行了研究。

Carbon Nanotubes (CNTs) were activated by CO2 and air under different durations, then were used in polarizable electrodes of electric double-layer capacitors (EDLCs).

摘要对碳纳米粉在高温下进行空气和二氧化碳活化处理，并用于制作双层容器极板。

The interelectrode dielectric adopts the polypropylene film with surface coarsening which is easy to impregnate so as to enhance the reliability of high-capacity capacitor.

极间介质为易于浸渍的表面粗化聚丙薄膜，特别提高了大容量容器的可靠性。

For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.

另外以感容阻计量仪(HP4284A)进行C-V曲线量测；以微安培计量仪(HP4140B)进行J-V曲线量测。

Nonpolarized capacitor C1 and potentiometer R2, a linear taper, determine the time constant of integrator IC1B.

无极性容C1和线性锥形位R2决 定积分IC1B的时间常数。

We quantizied the mesoscopic LC circuit, based on the infirmness coupling characteristic of a mesoscopic capacitor .

基于介观容存在弱特性,对介观LC路的量子效应进行了研究。

Carbon Nanotubes (CNTs) were activated by CO2 and air under different durations, then were used in polarizable electrodes of electric double-layer capacitors (EDLCs).

摘要对碳纳米粉在高温下进行空气和二氧化碳活化处理，并用于制作双层容极板。

The interelectrode dielectric adopts the polypropylene film with surface coarsening which is easy to impregnate so as to enhance the reliability of high-capacity capacitor.

极间介质为易于浸渍的表面粗化聚丙薄膜，特别提高了大容量容的可靠性。

For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.

另外以感容阻计量仪(HP4284A)进行C-V曲线量测；以微安培计量仪(HP4140B)进行J-V曲线量测。

Nonpolarized capacitor C1 and potentiometer R2, a linear taper, determine the time constant of integrator IC1B.

无极性C1和性锥形位R2决 定积分IC1B的时间常数。

We quantizied the mesoscopic LC circuit, based on the infirmness coupling characteristic of a mesoscopic capacitor .

基于介观存在弱耦合特性,对介观LC路的量子效应进行了研究。

Carbon Nanotubes (CNTs) were activated by CO2 and air under different durations, then were used in polarizable electrodes of electric double-layer capacitors (EDLCs).

摘要对碳纳米粉体在高温下进行空气和二氧化碳活化处理，并用于制作双层极板。

The interelectrode dielectric adopts the polypropylene film with surface coarsening which is easy to impregnate so as to enhance the reliability of high-capacity capacitor.

极间介质为易于浸渍的表面粗化聚丙薄膜，特别提高了大量的可靠性。

For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.

另外以感阻计量仪(HP4284A)进行C-V曲量测；以微安培计量仪(HP4140B)进行J-V曲量测。

Nonpolarized capacitor C1 and potentiometer R2, a linear taper, determine the time constant of integrator IC1B.

无极性C1和线性锥形位器R2决 定积分器IC1B的时间常数。

We quantizied the mesoscopic LC circuit, based on the infirmness coupling characteristic of a mesoscopic capacitor .

基于介观存在弱耦合特性,对介观LC路的量子效应进行了研究。

Carbon Nanotubes (CNTs) were activated by CO2 and air under different durations, then were used in polarizable electrodes of electric double-layer capacitors (EDLCs).

摘要对碳纳米管粉体在高温下进行空气和二氧化碳活化处理，于制作双层器极板。

The interelectrode dielectric adopts the polypropylene film with surface coarsening which is easy to impregnate so as to enhance the reliability of high-capacity capacitor.

极间介质为易于浸渍的表面粗化聚丙薄膜，特别提高了大量器的可靠性。

For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.

另外以感阻计量仪(HP4284A)进行C-V曲线量测；以微安培计量仪(HP4140B)进行J-V曲线量测。

Nonpolarized capacitor C1 and potentiometer R2, a linear taper, determine the time constant of integrator IC1B.

无极性容C1和线性锥形位R2决 定积分IC1B的时间常数。

We quantizied the mesoscopic LC circuit, based on the infirmness coupling characteristic of a mesoscopic capacitor .

基于介观容存在弱耦合特性,对介观LC路的量子效应进行了研究。

Carbon Nanotubes (CNTs) were activated by CO2 and air under different durations, then were used in polarizable electrodes of electric double-layer capacitors (EDLCs).

摘要对碳纳米粉在高温下进行空气和二氧化碳活化处理，并用于制作双层容极板。

The interelectrode dielectric adopts the polypropylene film with surface coarsening which is easy to impregnate so as to enhance the reliability of high-capacity capacitor.

极间介质为易于浸渍的表面粗化聚丙薄膜，特别提高了大容量容的可靠性。

For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.

另外以感容阻计量仪(HP4284A)进行C-V曲线量测；以微安培计量仪(HP4140B)进行J-V曲线量测。

Nonpolarized capacitor C1 and potentiometer R2, a linear taper, determine the time constant of integrator IC1B.

无极性容C1和线性锥形位R2决 定积分IC1B的时间常数。

We quantizied the mesoscopic LC circuit, based on the infirmness coupling characteristic of a mesoscopic capacitor .

基于介观容存在弱耦合特性,对介观LC路的量子效应进行了研究。

Carbon Nanotubes (CNTs) were activated by CO2 and air under different durations, then were used in polarizable electrodes of electric double-layer capacitors (EDLCs).

摘要对碳纳米粉在高温下进行空气和二氧化碳活化处理，并用于制作双层容极板。

The interelectrode dielectric adopts the polypropylene film with surface coarsening which is easy to impregnate so as to enhance the reliability of high-capacity capacitor.

极间介质为易于浸渍的表面粗化聚丙薄膜，特别提高了大容量容的可靠性。

For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.

另外以感容阻计量仪(HP4284A)进行C-V曲线量测；以微安培计量仪(HP4140B)进行J-V曲线量测。

Nonpolarized capacitor C1 and potentiometer R2, a linear taper, determine the time constant of integrator IC1B.

无极性容C1和线性锥形位R2决 定积分IC1B的时间常数。

We quantizied the mesoscopic LC circuit, based on the infirmness coupling characteristic of a mesoscopic capacitor .

基于观容存在弱耦合特性,对观LC路的量子效应进行了研究。

Carbon Nanotubes (CNTs) were activated by CO2 and air under different durations, then were used in polarizable electrodes of electric double-layer capacitors (EDLCs).

摘要对碳纳米管粉体在高温下进行空气和二氧化碳活化处理，并用于制作双层容极板。

The interelectrode dielectric adopts the polypropylene film with surface coarsening which is easy to impregnate so as to enhance the reliability of high-capacity capacitor.

极间质为易于浸渍的表面粗化聚丙薄膜，特别提高了大容量容的可靠性。

For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.

另外以感容阻计量仪(HP4284A)进行C-V曲线量测；以微安培计量仪(HP4140B)进行J-V曲线量测。