Where the mask blocks the light, the photoresist is unchanged.

在掩模阻挡线的地方，刻胶没有变化。

The wafer is then sent through a hard bake to harden the remaining photoresist.

然后将晶圆送去进行硬烘烤，以使剩余的刻胶变硬。

Then, a liquid called " photoresist" is spun on and baked to harden.

接，名为“刻胶”的液体被均匀涂抹并烘烤硬化。

Wherever the light from  the stencil touches the wafer, the photoresist is weakened.

当模板上的线接触到晶圆时，刻胶就会被削弱。

In the lit areas, a reaction weakens the photoresist's chemical bonds.

在区域，反应会削弱刻胶的化学键。

To clean up, we use yet another special chemical that washes away any remaining photoresist.

为了清理，我们使用了另特殊的化学物质来洗掉所有残留的刻胶。

Note that the oxide layer under the photoresist is protected.

请，刻胶下方的氧化层受到保护。

And new problems arise: today, PFAS-based photoresists are essential to make ever-smaller features.

新的问题出现了：如今，基于PFAS的刻胶对于制造越来越小的特征至关重要。

Once again, we wash away remaining photoresist.

我们再次洗掉剩余的刻胶。

Photoresists aren’t very useful by themselves, but are super powerful when used in conjunction with a photomask.

刻胶本身不是很有用，但与掩模结合使用时非常强大。

The wafer is doused in another chemical to wash away that weakened photoresist, leaving an image of the mask.

晶圆会被另化学物质冲洗， 以清除那层被削弱的阻剂，留下掩模的图像。

Once more, we apply a photoresist, and use a new photomask to etch little channels.

再次，我们应用刻胶，并使用新的掩模来蚀刻小通道。

Next the  wafer is sent to a photoresist stripper where the mask layer is removed.

接下来，晶圆被送往刻胶剥离器，去除掩模层。

The process essentially starts again, first by building up a fresh oxide layer ...which we coat in photoresist.

这个过程基本上又开始了，首先是建立个新的氧化层… … 我们在上面涂上刻胶。

Next, using UV Light and a stencil, a pattern is applied to the photoresist.

接下来，使用紫外线和模板将图案应用到刻胶上。

These tools include the  photoresist spin coater, photolithography tool, developer and photoresist stripper.

这些工具包括刻胶旋涂机、刻胶工具、显影剂和刻胶剥离剂。

The wafer then goes to the developer  and the weakened photoresist is washed away, leaving only the patterned nanoscopic stencil on  the wafer.

然后， 晶圆进入显影剂， 弱化的刻胶被洗掉，只在晶圆上留下图案化的纳米级模板。

Next photoresist is  spread across the surface and the wafer is sent through a soft bake to remove the solvent.

接下来，将刻胶涂抹在表面，并将晶圆送去软烘烤以去除溶剂。

So, very similar to before, we apply a photoresist, use a photomask, dissolve the exposed resist, and use a chemical to remove any exposed metal.

因此，与之前非常相似， 我们应用刻胶， 使用掩模， 溶解暴露的抗蚀剂，并使用化学物质去除任何暴露的金属。

To start, a layer of insulating silicon dioxide is deposited  on top of the wafer and then a layer of light sensitive photoresist is spread across the top.

首先，在晶圆顶部沉积层绝缘二氧化硅，然后在顶部涂上层感刻胶。