The leptonic decay widths of and are also given here.
同时本文还计算了和到轻子对的衰变宽度。
The leptonic decay widths of and are also given here.
同时本文还计算了和到轻子对的衰变宽度。
The results also show that green band emission is due to transition from conduction band to deep acceptor level which result in antiposition defect of OZn.
同样方法测量的530nm绿峰的发光衰变规律显示绿光于导
至OZn反
深受
能级的跃迁。
声明:以上例句、词性分类均由互联网资自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The leptonic decay widths of and are also given here.
同时本文还计算了和到轻子对衰变宽度。
The results also show that green band emission is due to transition from conduction band to deep acceptor level which result in antiposition defect of OZn.
同样方法测量530nm
发光衰变规律显示
光主要源于导
至OZn反位缺陷深受主能级
跃迁。
声明:句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件
观点;若发现问题,欢迎向我们指正。
The leptonic decay widths of and are also given here.
同时本文还计算了和到轻子对的衰变宽度。
The results also show that green band emission is due to transition from conduction band to deep acceptor level which result in antiposition defect of OZn.
同样方法测量的530nm绿峰的发衰变规律显示绿
源于导
至OZn反位
受
能级的跃迁。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The leptonic decay widths of and are also given here.
同时本文还计算了和到轻子对的衰变宽度。
The results also show that green band emission is due to transition from conduction band to deep acceptor level which result in antiposition defect of OZn.
同法测量的530nm绿峰的发光衰变规律显示绿光主要源于导
至OZn反位缺陷深受主能级的跃迁。
声明:以上例句、词性由互联网资源自动生成,部
未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The leptonic decay widths of and are also given here.
同还计算了和到轻子对的衰变宽度。
The results also show that green band emission is due to transition from conduction band to deep acceptor level which result in antiposition defect of OZn.
同样方法测量的530nm绿峰的发光衰变规律显示绿光主要源于导至OZn反位缺陷深受主能级的跃迁。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过核,其表达内容亦不代表
软件的观点;若发现问题,欢迎向我们指正。
The leptonic decay widths of and are also given here.
同时本文还计算了和到轻子对衰变宽度。
The results also show that green band emission is due to transition from conduction band to deep acceptor level which result in antiposition defect of OZn.
同样方法测量530nm绿峰
发光衰变
示绿光主要源于导
至OZn反位缺陷深受主
跃迁。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件观点;若发现问题,欢迎向我们指正。
The leptonic decay widths of and are also given here.
时本文还计算了和到轻子对的衰变宽度。
The results also show that green band emission is due to transition from conduction band to deep acceptor level which result in antiposition defect of OZn.
样方法测量的530nm绿峰的发光衰变规律显示绿光主要源于导
至OZn反位缺陷深受主能级的跃迁。
声明:以上例、词性分类均由互联网资源自动生成,部分未经过人工审
,
达内容亦不代
本软件的观点;若发现问题,欢迎向我们指正。
The leptonic decay widths of and are also given here.
同时本文还计算了和到的衰变宽度。
The results also show that green band emission is due to transition from conduction band to deep acceptor level which result in antiposition defect of OZn.
同样方法测量的530nm绿峰的发光衰变规律显示绿光主要源于导至OZn反位缺陷深受主能级的跃迁。
声明:以上例句、词性分类均由互联网资源成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The leptonic decay widths of and are also given here.
同时本文还计算了和到轻衰变宽度。
The results also show that green band emission is due to transition from conduction band to deep acceptor level which result in antiposition defect of OZn.
同样方法测量530nm绿峰
发光衰变规律显示绿光主要
于导
至OZn反位缺陷深受主能级
跃迁。
声明:以上例句、词性分类均由互联网资生成,部分未经过人工审核,其表达内容亦不代表本软件
观点;若发现问题,欢迎向我们指正。