In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓材料上具有室温铁磁
的质，被预期能
用在磁记忆体的元件和积体电路的材料上。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓材料上具有室温铁磁的质，被预期能用在磁记忆体的元件和积体电路的材料上。
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