The results also show that green band emission is due to transition from conduction band to deep acceptor level which result in antiposition defect of OZn.
同样方法测量
530nm
发光衰变规律显示光主要源于导带至OZn反位缺陷深受主
级跃迁。
The results also show that green band emission is due to transition from conduction band to deep acceptor level which result in antiposition defect of OZn.
同样方法测量530nm发光衰变规律显示光主要源于导带至OZn反位缺陷深受主级跃迁。
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